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This analysis demonstrates advancements in photodiode structure formation in indium antimonide, suggesting improvements for sensitivity and dark current.
The processes of photodiode structure formation in indium antimonide single crystals have been described. Two variants of the photodiode structures have been considered, namely: planar diode and mesastructure. It has been shown that the chosen technological parameters (dose of beryllium implantation, energy of implantation, annealing modes) provide formation of structures sensitive to infrared radiation. The proposed mesastructure technology has the following advantages: the reverse current for the planar diode is much larger, the diodes with mesastructure have higher sensitivity and much lower dark current value.
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Yu. V. Goltvyanskyi (2025) studied this question.
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