Long‐Range Trion Guides in Strain‐Engineered Atomically Thin Semiconductor

Exciton‐based devices offer a compelling route to address the trade‐off between integration density and response speed faced by electronic and photonic systems. In atomically thin transition metal dichalcogenide, excitons exhibit remarkable binding strength together with adjustable valley characteristics, which makes it possible to explore excitonic behaviors and realize device functionalities at room temperature. However, realizing directional exciton motion within atomically thin semiconductors remains a challenge due to their intrinsic isotropic diffusion nature, which limit the transport efficiency of excitons in specific directions. Here, the capillary force‐assisted technique is proposed to fabricate long‐range trion guides in atomically thin semiconductors, enabling the direct visualization of oriented exciton transport. Exciton funneling and exciton‐to‐trion conversion in heterostructure of WSe 2 monolayer transferred on SiC nanowire to create strain gradients are demonstrated by micro photoluminescence (PL) mappings and first‐principle calculations. An unusual remote emission effect—where PL appears nearly 10 μm distant from the excitation spot—is detected, and this behavior is ascribed to the strain‐engineered potential profile that confines trions within the 1D pathway and directs their transport away from the excitation region. These results offer new insights into directional trion guiding within 2D semiconductors.