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September 24, 2025Journal of the American Ceramic Society

Strain engineering and atomic defect interaction in BiFeO3 via Fe implantation for enhanced polarization response

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Authors

YLYongshen LuWZWen ZhangWuhan University of TechnologyHZH. R. ZhaiWuhan University of Technology

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Implication

Atomic-scale Fe implantation improves polarization and reduces leakage current in BiFeO3, suggesting advances in oxide nanoelectronics.

Key Points

  • Implantation significantly enhances the polarization response by 50%, improving the material's efficiency.
  • Controlled Fe implantation reduces leakage current by tenfold, demonstrating effective defect management.
  • Atomically engineered strain modifies octahedral tilt patterns, facilitating better orbital hybridization.
  • A predictive relationship between defect engineering and polarization stability offers a breakthrough for oxide electronics.

Cite This Study

Lu et al. (2025) studied this question.

synapsesocial.com/papers/68d6e1248b2b6861e4c3f904https://doi.org/10.1111/jace.70260
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