Anomalous Electrical Transport in SnSe₂ Nanosheets: Role of Thickness and Surface Defect States

This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe₂ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in two-dimensional systems, we find a semiconducting to metallic resistivity behavior with decreasing thickness. The analysis of low-temperature conduction indicates an increased density of states at Fermi-level with decreasing thickness, which is further corroborated by gate bias dependent conductance measurement. The enhanced conductivity in thinner flake is attributed to the n-type doping arising from surface defect states. The presence and evolution of these defect states with thickness is probed by thickness-dependent room-temperature Raman spectroscopy. Our study provides insights into the thickness-dependent electronic transport mechanism of SnSe₂ and the crucial role of defect states in governing the observed conductivity behavior.