Preparation and Performance Exploration of MoS2/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor

Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS2 field-effect transistors (FETs), WSe2 FETs, and MoS2/WSe2 VdWH TFETs. The N-type characteristics of the MoS2 and P-type characteristics of WSe2 are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS2/WSe2 VdWH TFET, which exhibits a drain current switching ratio of 105. This study provides valuable insights for the development of novel low-power devices.