Performance modeling of CsPbX₃ (X=Br,I) solar cells with PCBM as hole transport material

Hole transport layer (HTL)-free perovskite solar cells (PSCs) face significant challenges related to charge extraction and recombination at the perovskite/electrode interface. In this study, we numerically investigate the use of PCBM as an hole transport layer between the perovskite and carbon electrode in HTL-free configuration.Using SCAPS-1D simulations, we modeled the device with CsPbBr3 as the absorber layer, tin dioxide (SnO2) as the electron transport layer (ETL), and indium tin oxide (ITO) as the transparent conductive oxide (TCO). The simulation achieved a power conversion efficiency (PCE) of 11.08%, which was validated by comparing the modeled device’s performance with experimentally fabricated CsPbBr3-based PSCs reported in the literature. Furthermore, to enhance performance, CsPbBr3 was replaced with CsPbI3, resulting in a significant increase in PCE to 17.03%. Our results underscore the effectiveness of PCBM in PSCs, providing a promising approach to enhance charge transport and boost device efficiency.