A Benchmark of Profiling Techniques for the Examination of Silicon with Low Dopant Concentrations Across Wide Field of Views

In this work we present a comparison between off-axis electron holography, scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM) and secondary ion mass spectrometry (SIMS) techniques for the depth profiling of n-type dopants in epitaxially filled cavities and conventionally ion-implanted Si substrates. SIMS and SCM is the best combination to quantify and profile dopants in Si substrates that have been ion implanted with phosphorus (peak concentrations in the 1017-1018 at/cm3 range). In thinner structures such as trenches, SCM, SSRM or electron holography is preferred depending on the physical properties of specimen (doping level, dimensions). Respective strengths and limitations for the techniques applied to the different structures are highlighted.