Optical Manipulation‐Prepared Edge‐Contacted MoTe₂‐NbS₂ Heterojunction Photodetectors for High‐Performance, Self‐Powered, and Consistent Broadband Detection

Photodetectors, as fundamental components of modern optoelectronic systems, hold significant potential across various domains including communications, healthcare, and military reconnaissance. Heterojunctions play a crucial role in enhancing carrier separation through interface energy band engineering, thereby enabling high‐performance detection. Furthermore, metal‐semiconductor edge contacts can further optimize device performance, though conventional fabrication methods are often complex, time‐consuming, and risk inducing material damage. A novel approach is proposed for realizing edge contact between 2D semiconductors and metals by using femtosecond laser‐driven nanosheets moving on a substrate. MoTe 2 and NbS 2 nanosheets are precisely assembled into edge‐contact heterojunction photodetectors by combining dry transfer techniques with optical manipulation. The device exhibits excellent responsivity (2 A W −1 ), specific detectivity (1.36 × 10⁸ Jones), and quantum efficiency (278%) at 900 nm. Moreover, this detector demonstrates a superior response speed over traditional top‐contact detectors, achieving a response time of 30/46 µs and a response bandwidth of 5.4 kHz. Significantly, the detectors show broadband optical response spanning 280–1380 nm, with a consistent responsivity maintained between 280 and 1200 nm. The optical manipulation scheme also provides new solutions for the preparation of transverse heterojunction, customized edge‐contact structure, and modulation of heterojunction junction area, which injects new momentum for the development of future optoelectronic devices.