Lifetime Prediction of GaN Power Devices Based on COMSOL Simulations and Long Short-Term Memory (LSTM) Networks

Gallium nitride (GaN) power devices have attracted extensive attention due to their superior performance in high-frequency and high-power applications. However, the reliability and lifetime prediction of these devices under various operating conditions remain critical challenges. In this study, a hybrid approach combining finite element simulation and deep learning is proposed to predict the lifetime of GaN power devices. COMSOL Multiphysics (V6.3) is employed to simulate the thermal and mechanical stress behavior of GaN devices under different power and frequency conditions, while capturing key degradation indicators such as temperature cycles and stress concentrations. The variation in temperature over time can reflect the degradation of the device and also reveal the fatigue damage caused by the long-term accumulation of thermal stress on the chip. LSTM performs exceptionally well in extracting features from time series data, effectively capturing the long-term and short-term dependencies within the time series. By using simulation data to establish a connection between the chip temperature and its service life, the temperature data and the lifespan data are combined into a dataset, and the LSTM neural network is used to explore the impact of temperature changes over time on the lifespan. The method mentioned in this paper can make preliminary predictions of the results when sufficient experimental data cannot be obtained in a short period of time. The prediction results have a certain degree of reliability.