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October 2, 2025Open Access

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

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Authors

APAtanu PatraPKP. KonradASAndreas Sperlich

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Overview

All-optical method measures defect density in hBN via raman and photoluminescence analysis, suggesting new advancements in quantum applications.

Key Points

  • The method allows for the accurate quantification of spin defect densities down to 10^15 defects/cm^3, enhancing the potential for quantum optical applications.
  • Raman modes D1 and D2 are identified as critical signatures related to negatively charged boron vacancies in hBN, crucial for defect characterization.
  • A numerical model adapted from graphene links raman and photoluminescence intensities to absolute defect densities, providing a universal quantification tool.
  • This approach is non-destructive and uniquely suited for thin hBN flakes, overcoming limitations of conventional defect quantification techniques.

Cite This Study

Patra et al. (2025) studied this question.

synapsesocial.com/papers/68de84c45b556a9128e1bfbbhttps://doi.org/10.48550/arxiv.2506.19803
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Also Consider

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  1. 1Negatively charged boron-vacancy defect in hexagonal boron nitride nanoparticles2024 · 5 citations
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  5. 5Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN2025 · 5 citations