Investigation of a SiC/Si Heterojunction as a Potential Solar Cell: Performance under Illumination

The integration of wide bandgap semiconductors with silicon has attracted significant interest for advancing photovoltaic technologies. In this study we experimentally fabricated is potential as a solar cell. The heterojunction was developed by depositing carbon on p-type silicon substrates using Plasma Enhanced Chemical Vapor Deposition (PECVD) at 700℃ leading to a formation of a SiC layer and establishment of a p-n junction. Mechanical hardness and surface morphology were examined using a vickers hardness tester and optical microscopy confirming the structural integrity of the fabricated junction. Electrical behavior was studied under both dark and illuminated conditions using Keithley 2400 source meter. In the dark, the junction exhibited diode-like rectifying characteristics with a reverse saturation current density of 4.58×10‑5 A/cm2 and an ideality factor of 10.19 suggesting recombination-dominated current transport. Under standard illumination (AM 1.5, 100 Mw/cm2) the heterojunction displayed clear photovoltaic activity, with a short-circuit current density (Jsc) of 13.12 mA/cm2 an open- circuit voltage (Voc) of 0.91V, a fill factor (FF) of 61% and a conversion efficiency (ƞ) of 12%. These results demonstrate that the SiC/Si heterojunction can be successfully fabricated via PECVD and operated as a functional solar cell. The study provides experimental validation of and operated as a functional solar cell. The study provides experimental validation of SiC/Si structures as promising candidates for efficient and thermally stable photovoltaic devices complementing earlier simulation-based reports and paving the way for further optimization toward higher efficiencies