Optical and electrical properties of SiC/p-Si heterojunction

Abstarct In this study, SiC was used to manufacture Al/SiC/p-Si/Al heterojunction structure by thermal evaporation method. X-ray diffractometry (XRD) and field emission scanning electron microscope (FE-SEM) analyses were evaluated for the characterization of semiconductor SiC layers. For the electrical characterization of the heterojunction, current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) parameters were measured at room temperature (RT) and under various illumination conditions. Ideality factor (n) and barrier height (Ф b ) values were calculated as 1.32 and 0.85 eV in the dark and 1.22 and 0.77 eV at 100 mW/cm 2 illumination at RT, respectively. The results provide information indicating that Al/SiC/p-Si/Al heterojunction structure is promising for photovoltaic devices.