Optimization of light output in GaN LED with triangular triple-cycle photonic-crystal structures

To enhance the light extraction efficiency (LEE) of GaN-based lightemitting diodes (LEDs), this study proposes a method for the synergistic modulation of LEE using triple-period photonic crystals and doped materials. By constructing a tripleperiod photonic crystal structure with a triangular arrangement on the LED surface, we investigated the relationships of bandgap, electromagnetic field distribution on the light-emitting surface, and LEE of triple-period photonic crystals doped with different materials with the variation of photonic crystal structural parameters and In doping concentration. It was found that when the In doping concentration is 30%, the maximum LEE in the blue light band reaches 21.83%, which is 32.54% higher than that of the single-period structure and 20.14% higher than that of the double-period structure. This work provides data support and theoretical methods for the design of GaN-based LEDs with high LEE.