Simulation-Based Design of a Silicon SPAD with Dead-Space-Aware Avalanche Region for Picosecond-Resolved Detection

This study presents a simulation-based design of a silicon single-photon avalanche diode (SPAD) optimized for picosecond-resolved photon detection. Utilizing COMSOL Multiphysics, we implement a dead-space-aware impact ionization model to accurately capture history-dependent avalanche behavior. A guard ring structure and tailored doping profiles are introduced to improve electric field confinement and suppress edge breakdown. Simulation results show that the optimized device achieves a peak electric field of 7 × 107 V/m, a stable gain slope of −0.414, and consistent avalanche triggering across bias voltages. Transient analysis further confirms sub-20 ps response time under −6.5 V bias, validated by a full-width at half-maximum (FWHM) of ~17.8 ps. Compared to conventional structures without guard rings, the proposed design exhibits enhanced breakdown localization, reduced gain sensitivity, and improved timing response. These results highlight the potential of the proposed SPAD for integration into next-generation quantum imaging, time-of-flight LiDAR, and high-speed optical communication systems.