Wafer-Scale Homogenous Growth of Tungsten Disulfide via Promoter-Assisted Metal–Organic Chemical Vapor Deposition

Two-dimensional semiconducting transition metal dichalcogenides (TMDs) are promising materials for next-generation electronics and optoelectronics due to their exceptional electrical and optical properties. However, achieving wafer-scale growth of high-quality uniform TMDs films remains challenging. In this study, we demonstrate the wafer-scale growth of monolayer tungsten disulfides (WS2) using metal–organic chemical vapor deposition, a widely adopted method in compound semiconductor fabrication. The resulting WS2 films exhibit high uniformity and optical properties comparable to exfoliated single-crystal. Film quality was further enhanced by spin-coating sodium chloride as a promoter prior to growth, which increased grain size from tens to hundreds of nanometers and significantly improved optical performances. These improvements, commonly observed for other TMDs, are attributed to suppressed nucleation and promoted lateral crystal growth facilitated by liquid-phase intermediates. Our findings provide a scalable pathway for high-crystallinity TMDs in film production.