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This is a Experimental Study study.

October 5, 2025Journal of Applied PhysicsOpen Access

Single-crystalline Si1−xGex:B films with active doping concentration up to 3.5 × 1021 cm−3

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Authors

FLF. K. LiuZhejiang University JWJian‐Huan WangBeijing Academy of Quantum Information Sciences JZJieyin ZhangSongshan Lake Materials Laboratory

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Implication

This research demonstrates increased active boron doping levels in Si1−xGex films, revealing a potential for reduced contact resistance in transistors.

Key Points

Active boron doping concentrations exceed 3.5 × 1021 cm−3, indicating a significant advancement for transistor efficiency.
At x = 0.5, active doping reaches a peak of 3.56 × 1021 cm−3, suggesting optimal germanium content for doping.
Single-crystalline Si1−xGex films have been fabricated with high quality, confirming potential for low-resistivity applications.
Resistivity increases at high doping levels, reflecting mobility degradation, which is essential to consider in design.

Cite This Study

Liu et al. (2025) studied this question.

synapsesocial.com/papers/68e24e60d6d66a53c24732cd https://doi.org/10.1063/5.0293769

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Implication

This research demonstrates increased active boron doping levels in Si1−xGex films, revealing a potential for reduced contact resistance in transistors.

Single-crystalline Si1−xGex:B films with active doping concentration up to 3.5 × 1021 cm−3

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Member takes

Implication

Key Points

Cite This Study

Single-crystalline Si1−xGex:B films with active doping concentration up to 3.5 × 1021 cm−3

Discussion

Member takes

Implication

Key Points

Cite This Study

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