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This study presents a C–BP memristor that detects hazardous information with improved performance, indicating its potential utility for safety applications.
The perception of hazardous information is a crucial factor in ensuring safety in production. In recent years, multi‐mode sensing has been proven to be an effective approach for developing efficient perception systems. However, these systems still rely on various combinations of single‐function sensors within traditional von Neumann architecture, which increases the system's overall complexity. In this study, carbon‐doped black phosphorus (C–BP)‐based multi‐perception memristors were successfully developed for hazardous information perception. The C–BP multi‐perception memristor exhibits remarkable stability and high surface activity due to the coupling and synergistic effects of C doping. Its high surface activity enables the reliable perception of hazardous visual (ultraviolet light) and olfactory (ethanol, acetone, and human expirations) information in an open environment. Consequently, a hazardous detection system based on the C–BP multi‐perception memristor was simulated. The results indicate that the developed system outperforms traditional detection systems with an enhanced performance rate (97.6% vs. 90.5%) in perceiving hazardous information. This work may provide new insights into developing enhanced‐performance hazardous information perception systems.
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Yuan et al. (2025) studied this question.
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