Revealing Fast Negative Capacitance in PbZr0.2Ti0.8O₃ Thin Film with Acicular Ferroelastic Domains

Negative capacitance effects with fast response times hold great potential for reducing the power consumption in high-frequency nanoelectronics. Nevertheless, the negative capacitance effect faces considerable complexity arising from the dynamic interplay among electrostatic, nucleation energies, and domain evolution. This intricate balance poses a formidable challenge to achieving fast negative capacitance. Herein, we have achieved a fast negative capacitance time of ∼16.23 ns in PbZr