A rate equation for etching of TiN using hydrogen peroxide solution was proposed. TiN etching process could be modeled as a first order reaction by H 2 O 2 and HO 2 − concentration over pH range (0 - 9), suggesting that dissolution reaction is rate limiting step. Our finding is that HO 2 − reacts approximately 100 times faster than that of H 2 O 2 .
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Ueda et al. (2024) studied this question.
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