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April 4, 2024Journal of Physics D Applied PhysicsOpen Access

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

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Authors

TNToshimitsu NomuraHKHiroaki KakiuchiHOHiromasa Ohmi

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Nomura et al. (2024) studied this question.

synapsesocial.com/papers/68e70695b6db643587680b83https://doi.org/10.1088/1361-6463/ad3a74
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