Enhanced Stability Under Positive Bias Temperature Stress in Oxide Thin Film Transistors with Double Gate Structure By Improving Bottom Channel Interface

In this paper, we discuss the causes of reliability degradation in oxide TFTs with a double gate structure and propose methods for improvement. Reducing IGZO deposition power significantly improves PBTS (Positive Bias Temperature Stability) reliability in double gate structures. This improvement is attributed to reduction of excess oxygen defects accumulated at the bottom channel interface, as inferred from the difference in PBTS results for the top single gate and double gate structures