An interface modification layer holds paramount significance in reducing interface carrier recombination and improving the ohmic contact between the active layer and the electrode in organic solar cells (OSCs). Modifying or doping the widely used hole-transport layer (HTL) PEDOT:PSS to adjust the work function, conductivity, and acidity has become a common strategy for achieving high-performance OSCs. Metal oxides and two-dimensional materials as secondary dopants into PEDOT:PSS, respectively, as well as a replacement of PEDOT:PSS both exhibit immense potential for achieving high-performance OSCs due to their excellent electrical properties. Herein, we report a method utilizing a Fe
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Bao et al. (2024) studied this question.
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