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September 18, 2024ACS NanoOpen Access

Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Dasari Venkatakrishnarao Abhishek Mishra Yaoju Tarn Michel Bosman Rainer Lee Sarthak Das Subhrajit Mukherjee Teymour Talha-Dean Yiyu Zhang Siew Lang Teo Jianwei Chai Fabio Bussolotti Kuan Eng Johnson Goh Chit Siong Lau

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Abstract

Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO

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Cite This Study

Venkatakrishnarao et al. (2024) studied this question.

synapsesocial.com/papers/68e580d4b6db64358751ea3c https://doi.org/10.1021/acsnano.4c08554

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