Achieving beyond 30% efficiency for hole-transport-layer-free CsSnI3 perovskite solar cell: A comprehensive simulation study

In recent years, the growing significance of lead-free CsSnI 3 perovskite can be credited to its outstanding optoelectronic properties and environmentally friendly nature. Nevertheless, the photovoltaic potential of CsSnI 3 is limited due to challenges in achieving defect-free device structures. The current study thoroughly analyzed the performance of CsSnI 3 -based perovskite solar cells (PSCs) using the SCAPS-1D software. An in-depth investigation was performed on multiple physical parameters, including the thickness of perovskites layer, acceptor density (N A ), operating temperature, defect densities, shunt resistance (R Sh ) and series resistance (R S ). This comprehensive study aimed to identify the optimal device configuration that yields the highest power conversion efficiency (PCE) for the hole-transport-layer (HTL)-free CsSnI 3 -based PSCs. The obtained results confirmed that it is crucial to decrease the number of defects (N t ) at the perovskites/electron transport layer (ETL) interface to improve the efficiency of CsSnI 3 -based PSCs. The optimized device demonstrated exceptional performance, achieving an open-circuit voltage (V OC ) of 1.12 V, a fill factor (FF) of 85.08%, a short-circuit current density (J SC ) of 33.29 mA cm −2 and an efficiency of 31.87%. This high efficiency simulated result provide valuable insights into the design of high-performance CsSnI 3 -based PSCs, paving the way for potential breakthroughs in cost-effective and eco-friendly solar energy technologies.