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Electron mobility in nitride semiconductors is limited by electron-phonon, defect, grain-boundary, and dislocation scatterings. Scandium nitride (ScN), an emerging rocksalt indirect bandgap semiconductor, exhibits varying electron mobilities depending on growth conditions. Since achieving high mobility is crucial for ScN's device applications, a microscopic understanding of different scattering mechanisms is extremely important. Utilizing the
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Rudra et al. (2024) studied this question.
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