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July 1, 2026Applied Physics LettersOpen Access

Scattering mechanism of 2DEG in ScAlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

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Authors

KKKouei KubotaYWYusuke WakamotoTITakeshi Iwata

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Overview

Investigated transport properties of 2DEG in ScAlN/GaN heterostructures, suggesting improved transport for HEMT applications.

Key Points

  • This research aims to explore the transport properties and scattering mechanisms of 2DEG in ScAlN/GaN heterostructures.
  • Prepared four samples with varying Sc compositions (3%-17%) and barrier thickness (4-6.6 nm) on GaN/SiC substrates.
  • Conducted atomic-resolution imaging and evaluated transport characteristics at room temperature.
  • Analyzed scattering mechanisms affecting electron mobility through experimental and theoretical calculations.
  • Measured sheet electron density of 2.0–3.1 × 10^13 cm−2 and mobility of 179–468 cm2/Vs at room temperature.
  • Observed nearly constant sheet electron density from 2 to 400 K, indicating polarization effect induction.
  • Determined that temperature-independent interface roughness scattering dominates, aligning well with calculated total mobility.

Cite This Study

Kubota et al. (2026) studied this question.

synapsesocial.com/papers/6a44add75cd2549c8bc434f3https://doi.org/10.1063/5.0323168
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Also Consider

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  3. 3High mobility multiple-channel AlScN/GaN heterostructures2026 · 1 citations
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  5. 5Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures2025 · 10 citations