Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 16, 2000Applied Physics LettersOpen Access

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

View Full Paper
Ask AI
Bookmark
Share

Authors

ÉFÉric FrayssinetCentre National de la Recherche ScientifiqueWKW. KnapWarsaw University of TechnologyPLP. LorenziniUniversité Côte d'Azur

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Frayssinet et al. (2000) studied this question.

synapsesocial.com/papers/6a940727d3a1effb396d0f48https://doi.org/10.1063/1.1318236
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 11.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect1999 · 55 citations
  2. 2Small-angle scattering in two-dimensional electron gases1991 · 326 citations
  3. 3Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching1999 · 144 citations
  4. 4Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1− x N heterojunctions1992 · 246 citations
  5. 5Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions1999 · 42 citations