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August 1, 2024ACS Applied Electronic Materials

Enhanced Shubnikov–de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas

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Authors

CKChiranjit KarmakarRKR.K. KaneriyaSMSudip Mukherjee

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Cite This Study

Karmakar et al. (2024) studied this question.

synapsesocial.com/papers/68e5e0f5b6db643587575a67https://doi.org/10.1021/acsaelm.4c01089
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Also Consider

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  3. 3Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates2024 · 14 citations
  4. 4Shubnikov-de Haas quantum oscillations with large spin splitting in high-mobility Al<sub>0.8</sub>Ga<sub>0.2</sub>Sb/InAs/Al<sub>0.8</sub>Ga<sub>0.2</sub>Sb quantum-well heterostructures2025 · 1 citations
  5. 5Scattering mechanism of 2DEG in ScAlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy2026