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This is a In Vitro Study study (also classified as: Observational).

Shubnikov-de Haas quantum oscillations with large spin splitting in high-mobility Al0.8Ga0.2Sb/InAs/Al0.8Ga0.2Sb quantum-well heterostructures

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Epitaxial growth enhances quantum well performance in AlGaSb/InAs structures, suggesting potential for spintronic devices.

Shubnikov-de Haas quantum oscillations exhibited pronounced features up to 30 K, indicating robust electron behavior.
An ultra-high electron mobility of 7.18 × 10^5 cm²·V⁻¹·s⁻¹ was achieved alongside a giant magnetoresistance ratio of 3.65 × 10⁵%.
Optimization of the Al-to-Ga ratio enhanced quantum confinement, supporting better transport properties in the heterostructures.
The results highlight the applicability of AlGaSb/InAs quantum well heterostructures in energy-efficient spintronic applications.

Zhi et al. (2025) studied this question.

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