What question did this study set out to answer?

To measure the free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in an AlGaN/GaN heterostructure at room temperature using terahertz optical-Hall effect techniques.

February 28, 2011Applied Physics Letters

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

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Authors

SSS. SchöcheUniversity of Nebraska–Lincoln JSJunxia ShiON Semiconductor (United States)ABA. BoosalisFlometrics (United States)

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Implication

Experimental analysis demonstrates optical-Hall measurement of electron gas dynamics in AlGaN/GaN heterostructures, indicating frequency-independent carrier scattering.

Key Points

To measure the free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in an AlGaN/GaN heterostructure at room temperature using terahertz optical-Hall effect techniques.
Measured the optical-Hall effect across the spectral range from 640 GHz to 1 THz at room temperature.
Used complementary midinfrared spectroscopic ellipsometry to determine constituent layer thicknesses, phonon modes, and carrier parameters.
Compared terahertz optical-Hall parameters against standard direct-current electrical Hall effect measurements.
Determined the electron effective mass in the two-dimensional electron gas to be (0.22 ± 0.04)m0.
Achieved high-frequency sheet density and carrier mobility parameters that show close agreement with direct-current electrical Hall effect values.
Identified that carrier scattering mechanisms within the two-dimensional electron distribution operate independently of frequency up to 1 THz.

Cite This Study

Schöche et al. (2011) studied this question.

synapsesocial.com/papers/6a87f0d8010a27dee476e754 https://doi.org/10.1063/1.3556617

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Implication

Experimental analysis demonstrates optical-Hall measurement of electron gas dynamics in AlGaN/GaN heterostructures, indicating frequency-independent carrier scattering.

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

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Implication

Key Points

Cite This Study

Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

Discussion

Member takes

Implication

Key Points

Cite This Study

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