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September 10, 2025APL MaterialsOpen Access

Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures

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Authors

SOShunsuke OtaTOTomoya OkudaKKK. Kubota

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Overview

Observational analysis shows growth temperature enhances sheet carrier density in ScAlN, suggesting improved HEMT performance.

Key Points

  • Increased growth temperature improved structural and electrical properties of ScAlN films significantly.
  • At 750 °C, the sheet carrier density reached 1.1 × 10^13 cm−2, nearly tripling from structures without ScAlN.
  • X-ray diffraction confirmed coherent growth of ScAlN layers with a decrease in the c-axis lattice constant.
  • The findings imply potential negative fixed charges at the ScAlN/AlGaN interface, affecting carrier density.

Cite This Study

Ota et al. (2025) studied this question.

synapsesocial.com/papers/68c1bb7854b1d3bfb60edc67https://doi.org/10.1063/5.0281540
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