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September 16, 2025Applied Physics Letters

Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures

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Authors

TNThai‐Son NguyenCSChandrashekhar SavantAAAias Asteris

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Overview

Investigation reveals enhanced 2DEG properties in AlScN/GaN heterostructures, suggesting potential for advanced GaN devices.

Key Points

  • A two-dimensional electron gas forms at the AlScN-GaN interface, exceeding 2.5 × 10^13/cm2 in density.
  • Heterostructures with five AlScN/GaN periods reach an impressive electron density of 1 × 10^14/cm2 and mobility of 583 cm2/V.s.
  • Temperature-dependent measurements showed less than 15% carrier freeze out with a mobility of 851 cm2/V.s at 10 K.
  • Lattice-matched AlScN/GaN multilayers can enhance performance for RF, power, and photonic devices by removing strain limits.

Cite This Study

Nguyen et al. (2025) studied this question.

synapsesocial.com/papers/68d4538f31b076d99fa58de6https://doi.org/10.1063/5.0281623
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