October 18, 2025Open Access

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures

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MOCVD technique enhances Sc incorporation in AlN lattices, suggesting potential for high-performance electronics.

AlScN thin films showed controllable scandium incorporation and confirmed potential for HEMT applications.
Sc composition in the films reached about 13% by adjusting growth parameters, enhancing material properties.
Heterostructures exhibited a two-dimensional electron gas at the AlScN/AlN–GaN interface, vital for electronic devices.
X-ray photoelectron spectroscopy and high-resolution microscopy validated the wurtzite structure and Sc incorporation.

Vangipuram et al. (2025) studied this question.

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