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This work aims to develop high-quality aluminum scandium nitride thin films on silicon substrates for semiconductor applications.

Molecular beam epitaxy of AlScN on Si(111)

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Novel techniques achieve high-quality AlScN films on silicon, indicating potential for advanced devices.

This work aims to develop high-quality aluminum scandium nitride thin films on silicon substrates for semiconductor applications.
Utilized plasma-assisted molecular beam epitaxy for film growth
Employed AlN nucleation layer and compositionally graded AlScN buffer layers
Analyzed crystal quality through rocking curve measurements and surface morphology evaluation
Achieved crack-free AlScN films up to 150 nm thick with ScN fraction of 31%
Narrowed 002 rocking curve FWHM to as low as 0.51°
Measured surface RMS roughness of 0.54 nm over 400μm²
Observed piezoelectric coefficient as high as 34.7 pm/V with increasing scandium composition

Singh et al. (2026) studied this question.

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