Investigation of electrical properties at ambient and high temperature of Al 2 O 3 based Schottky barrier diodes structure using I-V, C-V and G/ω-V measurements

Abstract The study on the temperature effect on the electrical properties of aluminum in metal-insulator-semiconductor TiN/Al₂O₃/p-Si diodes found that temperature has a significant influence on its electrical properties. Temperature changes led to alterations in the interface states and series resistance, as well as affected the current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/ω-V) characteristics of the diodes. Higher temperatures resulted in a decrease in interface states and a lower leakage current, indicating improved performance. These findings can contribute crucial information for optimizing the performance and reliability of semiconductor devices that utilize aluminum oxide as a gate dielectric in high-temperature applications.