High-current-density (1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition. The quasi-vertical AlN SBDs exhibited a turn-on voltage of ∼2.5 V, a rectification ratio exceeding 107, an on-state current density of 2.5 kA/cm2, and a low specific on-resistance of 1.5 mΩ cm2. Temperature-dependent current–voltage (I–V) characterizations were performed at both forward and reverse biases to study the key device parameters and leakage at high temperatures. At forward bias, the Schottky barrier height increased, and the ideality factor decreased with increasing temperature, indicating an inhomogeneous metal/AlN interface. The inhomogeneous behavior of the Schottky barrier was comprehensively studied, and the extracted mean Schottky barrier height was 2.55 ± 0.27 eV. Temperature-dependent reverse leakage analysis revealed that Poole–Frenkel emission and trap-assisted tunneling are the dominant leakage mechanisms. This work can be beneficial for advancing the development of ultrawide bandgap AlN-based electronics.
Da et al. (Sun,) studied this question.
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