Applying multiple‐channel GNR on 4H‐SiC semiconducting material intensifying hydrogen gas sensor performance

The graphene nanoribbon field effect transistor abbreviated GNR‐FET is seriously emphasized for the hydrogen gas detection owing to attractive properties induced by the graphene material. For the first time, a multiple‐channel GNR deposited on 4H‐SiC semiconducting material is offered to detect the hydrogen gas. The hydrogen gas by different pressures is released to the multiple‐channel GNR to figure out the sensing power of the proposed sensor. The Pd metal is used as catalytic electrode trapping the hydrogen gas by making dipoles on the gate oxide/electrode interface. A Technology computer‐aided design based model from the non‐equilibrium green function (NEGF) method coupled with the Poisson–Schrodinger equation is used to simulate the electrical manner of the proposed gas sensor by workfunction modulation induced by these dipoles. The channel conduction during sensing hydrogen gas is much enhanced owing to the multiple‐channel GNR configuration. Three sensitivity definitions based on threshold voltage, ON current, and OFF current are presented and applied as benchmarks to evaluate the sensing power of the gas sensor. The results have shown the domination of the multiple‐channel GNR as compared to the single GNR sensor.