This analysis demonstrates high sensitivity of a gas sensor for hydrogen gas, highlighting reduced power consumption.
Abstract A single gate overlap source hetero gate dielectric TFET ( SGOS-HGD TFET) based gas sensor is proposed for the application of hydrogen gas detection. The sensor is modeled by employing a catalytic metal (palladium) gate and HfO₂/SiO₂ gate dielectrics where the work function of the gate deposited on top of the source and channel is changed after the absorption of the hydrogen. The performances of SGOS-HGD TFET based gas sensor are evaluated using Silvaco Atlas simulator. The results indicate that the ultra-high current sensitivity can reach 4.21×10⁹ when the gas molar concentration is 0 to 10⁻ ³ mol/L. Moreover, the lowest subthreshold slope is only 18.78 mV/decade when there is no gas. Therefore, the sensitivity of the SGOS-HGD TFET based gas sensor in terms of hydrogen gas detection is enhanced and the power consumption of the device is reduced, it could be a promising candidate to provide improved detection capabilities.
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Cui et al. (2025) studied this question.
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