Experimental evaluation demonstrates a compact dual-band matching network using PIN diodes for wireless local area networks, highlighting low insertion loss and high inter-band attenuation.
Active switching components are employed to propose a novel compact dual-band matching network (MN) with an adapted frequency in this paper. The design method involves the integration of active switching devices, stepped impedance resonator (SIR), and microstrip transmission line into the frequency response of a dual-band MNs. The PIN diode is employed as an active switching device in the proposed structure to increase the bandwidth of the MNs and attain the desired frequency. The dual-band MNs that are being proposed are fabricated and designed on the Rogers RO4350B substrate for use in Wireless Local Area Networks (WLANs). The simulation results demonstrate a high degree of congruence with the measurements. The maximal insertion losses and return losses in the first band are -1.3 and -24 dB, respectively. In the second band, they are -2.2 and -20.69 dB. The primary benefits of the proposed dual-band MNs are their high attenuation between two passbands, frequency matching capability, suitable return loss, and low insertion loss.
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Mohammadi et al. (2024) studied this question.
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