Pixel Circuit Design for X-ray Detection Utilizing a-IGZO Thin-Film Transistors

In recent advancements, X-ray detectors have made significant progress. Active pixel sensors exhibit superior Signal-to-Noise Ratio (SNR) compared to passive counterparts. The conventional pixel circuit for X-ray detectors has three transistors and one capacitor. We focused on simplifying this pixel to enhance resolution. Our research introduces and verifies a novel pixel circuit developed for high-resolution X-ray detectors. The proposed pixel circuit is composed by two n-type thin-film transistors and one capacitor. It requires two scan pulses and three operational stages. This structure can effectively reduce the component area of the pixel circuit. We designed RPI LEVEL = 35 amorphous TFT model and simulated for verify our proposed pixel circuit. In results, proposed pixel circuit successfully operated and shows 2.5 μV when the equivalent resistance of detector (R Detector ) is 10 MΩ, and 8.38 V when R Detector is 1 MΩ. To minimize the harmful effects of X-ray exposure, reducing the dosage is essential. Sensitivity and low noise are crucial factors, and the proposed circuit offers a compact design, increased sensitivity, and higher output voltage.