Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Silicon carbide MOSFETs are transforming power electronics by enabling higher switching frequencies and lower losses than their silicon-only counterparts. This study uses time-gated optical spectroscopy to investigate defect-assisted recombination in fully processed devices, specifically addressing their well-known hysteresis. The inquiry identifies a local vibrational mode with a very energy of 220 meV, indicating the presence of a carbon-cluster-like defect. This approach to characterizing interface states in MOSFETs reveals possibilities for enhancing device reliability and performance.