Superlattice-doped PMOS imaging arrays for broadband visible applications

This paper discusses the further development of JPL's n-type superlattice doping (2D doping) process for sensitivity and stability enhancement of backside illuminated (BSI), p-channel CCDs and PMOS pixel CMOS imaging arrays. We discuss the results of the n-type 2D-doping of SRI's backside illuminated PMOS pixel 4k×4k and 8k×8k CMOS imagers. We briefly describe the backside processing parameters for the optimization of the 2D-doping process and antireflection coating design. Performance characterization, including quantum efficiency (QE), dark signal, and modulation transfer function (MTF) as a function of silicon epitaxial thickness and operating temperature will be discussed. These will be compared with the performance of devices produced using SRI's standard BSI processes.