Diamond metal–oxide–semiconductor field-effect transistor (MOSFET) exhibited durable and stable dynamic switching characteristics at an unprecedentedly high voltage of −105 V. Switching turn-on and turn-off times were measured to be 7.64 and 4.93 ns, respectively, with a corresponding total switching loss of 20.03 pJ for a load resistance of 50 Ω. No Miller effect was observed due to the low Miller capacitance of 11 pF/mm. This study suggests the potentiality of diamond MOSFETs in prospective high-voltage, high-speed applications.
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Saha et al. (2024) studied this question.
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