A Diamond:H/WO 3 Metal–Oxide–Semiconductor Field-Effect Transistor

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A p-type Diamond:H/WO3metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO2as gate insulator, the Diamond:H/WO3MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO3-thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO3layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.