Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

In this paper, the effects of various proton irradiation energies and doses on the electrical characteristics of SiC MOSFETs have been evaluated and characterized using a proton accelerator. The devices under test were designed, fabricated and packaged using 1.2 kV/0.6 µm-tech SiC MOSFET processes. The results demonstrate that the threshold voltage (V th ) of the irradiated devices shifted towards negative values due to the radiation-induced positive oxide trapped charges. Moreover, this negative shift in V th and positive trapped charges of field limiting ring (FLR) oxide led to an increase in output currents and a reduction in the breakdown voltage values.