Enhancing Performance of Nanocrystalline SnO₂ by Photonic Curing Using Impedance Spectroscopy Analysis

Wide-bandgap tin oxide (SnO2) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods requires typical temperatures between 300 and 900 ◦C [1] with up-to 60 min crystallization times. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense pulsed light-induced crystallization of SnO2 thin films using only 500 μs of exposure time. Thin-film properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the SnO2 films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology and better ohmic contacts compared to thermally-annealed SnO2 films.