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Abstract α‐SnWO 4 is a promising semiconductor for solar water splitting, however, its performance is limited by weak water oxidation and poor charge transfer. In this study, we employ a vapor deposition method to uniformly implement a carbon layer onto the surface of SnWO 4 coupled with a CoNiP cocatalyst, successfully constructing the integrated CoNiP/C/SnWO 4 film photoanode and alleviating the oxidation of Sn 2+ when loading electrocatalyst. Incorporating the carbon layer enhances the interface charge conduction behavior between the SnWO 4 substrate and the CoNiP cocatalyst, thereby mitigating charge recombination. The synergistic interplay between the carbon layer and CoNiP leads to a remarkable achievement, as evidenced by the photocurrent of 1.72 mA cm −2 (1.23 V vs. RHE) observed for SnWO 4 film measured in 0.2 M potassium phosphate buffer solution. In this work, we demonstrate the viability of tailoring SnWO 4 photoanode and provide valuable insights for prospective advancements in modifying SnWO 4 photoanode.
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Zhang et al. (2024) studied this question.
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