We demonstrated that the surge current capability of 3.3 kV Schottky-barrier-diode-embedded (SBD-embedded) SiC MOSFETs is equivalent to that of conventional SiC MOSFETs and three times higher than that of SiC SBDs. Furthermore, we revealed that the bipolar degradation attributed to the repetitive surge stress of high current density was negligible, which can be explained by the small total area of the expanded stacking faults (SFs) caused by the limited total period of conduction of the body diodes.
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Kawahara et al. (2024) studied this question.
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