This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p -type ohmic contacts have been demonstrated on a 0.25 μm-thick p -type homoepitaxial layer of doping 8 × 10 18 ± 4 × 10 18 cm -3 . Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.
No takes yet. Share an insight, caveat, or question.
Rajgopal et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: