Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO₃

Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability in such devices, complex manufacturing process, and high cost still hinder their further application. Here, we present a method that achieves broadband spectral detection by impurity-level in SrSnO